Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation.
Identifieur interne : 000F11 ( Main/Exploration ); précédent : 000F10; suivant : 000F12Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation.
Auteurs : RBID : pubmed:22679556English descriptors
- KwdEn :
- MESH :
- chemical , chemistry : Indium, Nickel, Oxygen.
- instrumentation : Electronics.
- methods : Electronics.
- Algorithms, Electrodes, Electrons, Physicochemical Phenomena, X-Ray Absorption Spectroscopy.
Abstract
Intensive investigations have been launched worldwide on the resistive switching (RS) phenomena in transition metal oxides due to both fascinating science and potential applications in next generation nonvolatile resistive random access memory (RRAM) devices. It is noteworthy that most of these oxides are strongly correlated electron systems, and their electronic properties are critically affected by the electron-electron interactions. Here, using NiO as an example, we show that rationally adjusting the stoichiometry and the associated defect characteristics enables controlled room temperature conversions between two distinct RS modes, i.e., nonvolatile memory switching and volatile threshold switching, within a single device. Moreover, from first-principles calculations and x-ray absorption spectroscopy studies, we found that the strong electron correlations and the exchange interactions between Ni and O orbitals play deterministic roles in the RS operations.
DOI: 10.1038/srep00442
PubMed: 22679556
Links toward previous steps (curation, corpus...)
Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation.</title><author><name sortKey="Peng, Hai Yang" uniqKey="Peng H">Hai Yang Peng</name><affiliation><nlm:affiliation>Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore.</nlm:affiliation><country xml:lang="fr">Singapour</country><wicri:regionArea>Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371</wicri:regionArea></affiliation></author><author><name sortKey="Li, Yong Feng" uniqKey="Li Y">Yong Feng Li</name></author><author><name sortKey="Lin, Wei Nan" uniqKey="Lin W">Wei Nan Lin</name></author><author><name sortKey="Wang, Yu Zhan" uniqKey="Wang Y">Yu Zhan Wang</name></author><author><name sortKey="Gao, Xing Yu" uniqKey="Gao X">Xing Yu Gao</name></author><author><name sortKey="Wu, Tom" uniqKey="Wu T">Tom Wu</name></author></titleStmt><publicationStmt><date when="2012">2012</date><idno type="doi">10.1038/srep00442</idno><idno type="RBID">pubmed:22679556</idno><idno type="pmid">22679556</idno><idno type="wicri:Area/Main/Corpus">000C58</idno><idno type="wicri:Area/Main/Curation">000C58</idno><idno type="wicri:Area/Main/Exploration">000F11</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Algorithms</term><term>Electrodes</term><term>Electronics (instrumentation)</term><term>Electronics (methods)</term><term>Electrons</term><term>Indium (chemistry)</term><term>Nickel (chemistry)</term><term>Oxygen (chemistry)</term><term>Physicochemical Phenomena</term><term>X-Ray Absorption Spectroscopy</term></keywords><keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Indium</term><term>Nickel</term><term>Oxygen</term></keywords><keywords scheme="MESH" qualifier="instrumentation" xml:lang="en"><term>Electronics</term></keywords><keywords scheme="MESH" qualifier="methods" xml:lang="en"><term>Electronics</term></keywords><keywords scheme="MESH" xml:lang="en"><term>Algorithms</term><term>Electrodes</term><term>Electrons</term><term>Physicochemical Phenomena</term><term>X-Ray Absorption Spectroscopy</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Intensive investigations have been launched worldwide on the resistive switching (RS) phenomena in transition metal oxides due to both fascinating science and potential applications in next generation nonvolatile resistive random access memory (RRAM) devices. It is noteworthy that most of these oxides are strongly correlated electron systems, and their electronic properties are critically affected by the electron-electron interactions. Here, using NiO as an example, we show that rationally adjusting the stoichiometry and the associated defect characteristics enables controlled room temperature conversions between two distinct RS modes, i.e., nonvolatile memory switching and volatile threshold switching, within a single device. Moreover, from first-principles calculations and x-ray absorption spectroscopy studies, we found that the strong electron correlations and the exchange interactions between Ni and O orbitals play deterministic roles in the RS operations.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">22679556</PMID><DateCreated><Year>2012</Year><Month>06</Month><Day>08</Day></DateCreated><DateCompleted><Year>2013</Year><Month>02</Month><Day>25</Day></DateCompleted><DateRevised><Year>2013</Year><Month>11</Month><Day>21</Day></DateRevised><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">2045-2322</ISSN><JournalIssue CitedMedium="Internet"><Volume>2</Volume><PubDate><Year>2012</Year></PubDate></JournalIssue><Title>Scientific reports</Title><ISOAbbreviation>Sci Rep</ISOAbbreviation></Journal><ArticleTitle>Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation.</ArticleTitle><Pagination><MedlinePgn>442</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1038/srep00442</ELocationID><Abstract><AbstractText>Intensive investigations have been launched worldwide on the resistive switching (RS) phenomena in transition metal oxides due to both fascinating science and potential applications in next generation nonvolatile resistive random access memory (RRAM) devices. It is noteworthy that most of these oxides are strongly correlated electron systems, and their electronic properties are critically affected by the electron-electron interactions. Here, using NiO as an example, we show that rationally adjusting the stoichiometry and the associated defect characteristics enables controlled room temperature conversions between two distinct RS modes, i.e., nonvolatile memory switching and volatile threshold switching, within a single device. Moreover, from first-principles calculations and x-ray absorption spectroscopy studies, we found that the strong electron correlations and the exchange interactions between Ni and O orbitals play deterministic roles in the RS operations.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Peng</LastName><ForeName>Hai Yang</ForeName><Initials>HY</Initials><Affiliation>Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore.</Affiliation></Author><Author ValidYN="Y"><LastName>Li</LastName><ForeName>Yong Feng</ForeName><Initials>YF</Initials></Author><Author ValidYN="Y"><LastName>Lin</LastName><ForeName>Wei Nan</ForeName><Initials>WN</Initials></Author><Author ValidYN="Y"><LastName>Wang</LastName><ForeName>Yu Zhan</ForeName><Initials>YZ</Initials></Author><Author ValidYN="Y"><LastName>Gao</LastName><ForeName>Xing Yu</ForeName><Initials>XY</Initials></Author><Author ValidYN="Y"><LastName>Wu</LastName><ForeName>Tom</ForeName><Initials>T</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2012</Year><Month>06</Month><Day>07</Day></ArticleDate></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>Sci Rep</MedlineTA><NlmUniqueID>101563288</NlmUniqueID><ISSNLinking>2045-2322</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>045A6V3VFX</RegistryNumber><NameOfSubstance>Indium</NameOfSubstance></Chemical><Chemical><RegistryNumber>4OO9KME22D</RegistryNumber><NameOfSubstance>indium oxide</NameOfSubstance></Chemical><Chemical><RegistryNumber>7OV03QG267</RegistryNumber><NameOfSubstance>Nickel</NameOfSubstance></Chemical><Chemical><RegistryNumber>C3574QBZ3Y</RegistryNumber><NameOfSubstance>nickel monoxide</NameOfSubstance></Chemical><Chemical><RegistryNumber>S88TT14065</RegistryNumber><NameOfSubstance>Oxygen</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><CommentsCorrectionsList><CommentsCorrections RefType="Cites"><RefSource>Nat Mater. 2006 Apr;5(4):312-20</RefSource><PMID Version="1">16565712</PMID></CommentsCorrections><CommentsCorrections RefType="Cites"><RefSource>Nat Nanotechnol. 2008 Jul;3(7):429-33</RefSource><PMID Version="1">18654568</PMID></CommentsCorrections><CommentsCorrections RefType="Cites"><RefSource>Adv Mater. 2010 Dec 1;22(45):5193-7</RefSource><PMID Version="1">20957700</PMID></CommentsCorrections><CommentsCorrections RefType="Cites"><RefSource>Nat Nanotechnol. 2010 Feb;5(2):148-53</RefSource><PMID Version="1">20081847</PMID></CommentsCorrections><CommentsCorrections RefType="Cites"><RefSource>Adv Mater. 2010 Sep 22;22(36):4034-8</RefSource><PMID Version="1">20677188</PMID></CommentsCorrections><CommentsCorrections RefType="Cites"><RefSource>Small. 2009 Dec;5(24):2910-5</RefSource><PMID Version="1">19787676</PMID></CommentsCorrections></CommentsCorrectionsList><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Algorithms</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Electrodes</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Electronics</DescriptorName><QualifierName MajorTopicYN="N">instrumentation</QualifierName><QualifierName MajorTopicYN="Y">methods</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="Y">Electrons</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Indium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Nickel</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Oxygen</DescriptorName><QualifierName MajorTopicYN="N">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Physicochemical Phenomena</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">X-Ray Absorption Spectroscopy</DescriptorName></MeshHeading></MeshHeadingList><OtherID Source="NLM">PMC3369197</OtherID></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="received"><Year>2011</Year><Month>11</Month><Day>30</Day></PubMedPubDate><PubMedPubDate PubStatus="accepted"><Year>2012</Year><Month>4</Month><Day>30</Day></PubMedPubDate><PubMedPubDate PubStatus="epublish"><Year>2012</Year><Month>6</Month><Day>07</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2012</Year><Month>6</Month><Day>9</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2012</Year><Month>6</Month><Day>9</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2013</Year><Month>2</Month><Day>26</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1038/srep00442</ArticleId><ArticleId IdType="pubmed">22679556</ArticleId><ArticleId IdType="pmc">PMC3369197</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV2/Data/Main/Exploration
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000F11 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Exploration/biblio.hfd -nk 000F11 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV2
|flux= Main
|étape= Exploration
|type= RBID
|clé= pubmed:22679556
|texte= Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation.
}}
Pour générer des pages wiki
HfdIndexSelect -h $EXPLOR_AREA/Data/Main/Exploration/RBID.i -Sk "pubmed:22679556" \
| HfdSelect -Kh $EXPLOR_AREA/Data/Main/Exploration/biblio.hfd \
| NlmPubMed2Wicri -a IndiumV2
| This area was generated with Dilib version V0.5.76. |  |